Introduction of a new medium voltage technology for both 28FDSOI and 22FDX

ST will introduce of a true medium (3.3V) voltage technology (called GO3) platform in 28nm platform to significantly enhance the capability to realize analog functions whilst reducing its footprint (up to about 30%) whilst guaranteeing reliability performances in line with Automotive requirements. ST approach will be to optimize the most suitable gate oxide and stack processes and adjust the gate lengths of the new family of transistors to converge to the most effective solutions in terms of PPAC and ensuring the full compatibility with the current suite of devices. Additional devices enabling more effective analog design solutions will be developed, leveraging on the process developed for the introduction of the GO3 device, but also adding some specific resistors: this will augment the final analog product performances. Finally, an optimization of the interconnect metal scheme offer, with a flexible usage of different metal scheme will be developed (variable number of power grid layers) to provide the SoC architect further option in the optimization of the product.

GlobalFoundries will extend of the 22FDX device portfolio with a new device family with improved dielectric strength, in order to develop of ZG devices with higher voltage (up to 3.3V Vdd) as a differentiated solution for the Image Sensor Processor (ISP) market. The process development will optimize the trade-off between performance and reliability of ZG devices, and will enable to develop of a new capacitor solution compatible with thick ZG oxide. In addition, expand the SRAM offering to support low leakage current SRAM capability with ZG flux. At the end, these studies will improve analog device performance by developing new device solutions